Masaki Furumai

The optimised design and characterization of 1200 V / 2.0 mΩ cm<sup>2</sup> 4H-SiC V-groove trench MOSFETs

Kosuke Uchida, Y. Saitoh, Toru Hiyoshi et al. · 2015 · 20 citations

Semiconductor Technology, Electrical Engineering, Engineering +11

Gate oxide reliability of 4H-SiC V-groove trench MOSFET under various stress conditions

Toru Hiyoshi, Kosuke Uchida, Mitsuhiko Sakai et al. · 2016 · 20 citations

Trench Bottom Oxide, Semiconductor Technology, Electrical Engineering +13

The Influence of Surface Pit Shape on 4H-SiC MOSFETs Reliability under High Temperature Bias Tests

Kosuke Uchida, Toru Hiyoshi, Taro Nishiguchi et al. · Materials science forum · 2016 · 17 citations

Materials Engineering, Surface Pit Shape, Electrical Engineering +11

Fast switching 4H-SiC V-groove trench MOSFETs with buried P⁺ structure

Keiji Wãda, Takeyoshi Masuda, Y. Saitoh et al. · 2014 · 15 citations

Semiconductor Technology, Electrical Engineering, Trench Mosfet +9

Low on-resistance and fast switching of 13-kV SiC MOSFETs with optimized junction field-effect transistor region

Hidenori Kitai, Y. Hozumi, Hiromu Shiomi et al. · 2017 · 13 citations

Sic Mosfet, Semiconductor Technology, Electrical Engineering +15