Taro Nishiguchi

Heteroepitaxial growth of (111) 3C–SiC on well-lattice-matched (110) Si substrates by chemical vapor deposition

Taro Nishiguchi, Mitsuhiro Nakamura, Koji Nishio et al. · Applied Physics Letters · 2004 · 81 citations

Materials Science, Materials Engineering, Semiconductors +12

High-performance ultra-small single crystalline silicon microphone of an integrated structure

Takuro Tajima, Taro Nishiguchi, Shin-ichi Chiba et al. · Microelectronic Engineering · 2003 · 35 citations

Engineering, Microfabrication, Applied Physics +7

Nondestructive Analysis of Propagation of Stacking Faults in SiC Bulk Substrate and Epitaxial Layer by Photoluminescence Mapping

Norihiro Hoshino, Michio Tajima, Taro Nishiguchi et al. · Japanese Journal of Applied Physics · 2007 · 18 citations

Electrical Engineering, Sic Bulk Substrate, Engineering +14

The Influence of Surface Pit Shape on 4H-SiC MOSFETs Reliability under High Temperature Bias Tests

Kosuke Uchida, Toru Hiyoshi, Taro Nishiguchi et al. · Materials science forum · 2016 · 17 citations

Materials Engineering, Surface Pit Shape, Electrical Engineering +11

Suppression Mechanism of Double Positioning Growth in 3C-SiC(111) Crystal by Using an Off-Axis Si(110) Substrate

Mitsutaka Nakamura, Toshiyuki Isshiki, Taro Nishiguchi et al. · Materials science forum · 2005 · 14 citations

Engineering, Growth Model, Silicon On Insulator +19