Harald Goßner

Vertical Si-Metal-Oxide-Semiconductor Field Effect Transistors with Channel Lengths of 50 nm by Molecular Beam Epitaxy

Harald Goßner, I. Eisele, Lothar Risch Lothar Risch · Japanese Journal of Applied Physics · 1994 · 37 citations

Engineering, Electrical Engineering, Materials Science +17

Cable discharges into communication interfaces

Wolfgang Stadler, T. Brodbeck, R. Gärtner et al. · Electrical Overstress/Electrostatic Discharge Symposium · 2006 · 30 citations

Engineering, Communication, Electrical Engineering +10

Study of system ESD codesign of a realistic mobile board

David Johnsson, Harald Goßner · Electrical Overstress/Electrostatic Discharge Symposium · 2011 · 27 citations

Engineering, Electrical Engineering, Circuit Theory +8

Interferometric temperature mapping during ESD stress and failure analysis of smart power technology ESD protection devices

C. Fürböck, D. Pogány, Martin Litzenberger et al. · Journal of Electrostatics · 2000 · 25 citations

Engineering, Electrical Engineering, Microelectronics +14

Powered system-level conductive TLP probing method for ESD/EMI hard fail and soft fail threshold evaluation

Thomas Schwingshackl, Benjamin Orr, Joost Willemen et al. · Electrical Overstress/Electrostatic Discharge Symposium · 2013 · 21 citations

Engineering, Computer Engineering, Electrical Engineering +9