L. Vendrame

Measurement of the electron ionization coefficient at low electric fields in InGaAs-based heterojunction bipolar transistors

C. Canali, Cristiano Forzan, A. Neviani et al. · Applied Physics Letters · 1995 · 38 citations

Engineering, Electrical Engineering, Physics +13

Extension of impact-ionization multiplication coefficient measurements to high electric fields in advanced Si BJT's

Enrico Zanoni, E.F. Crabbé, J.M.C. Stork et al. · IEEE Electron Device Letters · 1993 · 37 citations · Full text

Engineering, Electrical Engineering, Materials Science +10

Measurements and extractions of parasitic capacitances in ulsi layouts

Angelo Brambilla, Paolo Maffezzoni, L. Bortesi et al. · IEEE Transactions on Electron Devices · 2003 · 35 citations

Engineering, Computer Engineering, Electrical Engineering +17

Tools for non-invasive optical characterization of CMOS circuits

Franco Stellari, Franco Zappa, S. Cova et al. · 2003 · 35 citations

Engineering, Computer Engineering, Electrical Engineering +17

Experimental and Monte Carlo analysis of impact-ionization in AlGaAs/GaAs HBT's

C. Canali, Paolo Pavan, Aldo Di Carlo et al. · IEEE Transactions on Electron Devices · 1996 · 33 citations · Full text

Engineering, Electrical Engineering, Materials Science +17