J. E. Williams

Disordering of the ordered structure in MOCVD-grown GaInP and AlGaInP by impurity diffusion and thermal annealing

P. Gavrilovič, F. P. Dabkowski, Kathleen Meehan et al. · Journal of Crystal Growth · 1988 · 78 citations

Engineering, Materials Engineering, Materials Science +17

Disordering of the ordered structure in metalorganic chemical vapor deposition grown Ga0.5In0.5P on (001) GaAs substrates by zinc diffusion

F. P. Dabkowski, P. Gavrilovič, Kathleen Meehan et al. · Applied Physics Letters · 1988 · 58 citations

Natural Sciences, Materials Science, Physics +17

Band gap of ‘‘completely disordered’’ Ga0.52In0.48P

M. C. DeLong, D. J. Mowbray, R. A. Hogg et al. · Applied Physics Letters · 1995 · 48 citations

Natural Sciences, Materials Science, Physics +15

Low-threshold disorder-defined buried heterostructure strained-layer Al<i>y</i>Ga1−<i>y</i>As-GaAs-In<i>x</i>Ga1−<i>x</i>As quantum well lasers (λ∼910 nm)

J. S. Major, L. J. Guido, K. C. Hsieh et al. · Applied Physics Letters · 1989 · 46 citations

Engineering, Electrical Engineering, Materials Science +17

Continuous operation of high-power (200 mW) strained-layer Ga _1−x In _x As/GaAs quantum-well lasers with emission wavelengths 0.87 ≤ λ ≤ 0.95 μm

W. Stutius, P. Gavrilovič, J. E. Williams et al. · Electronics Letters · 1988 · 45 citations

Engineering, Electrical Engineering, Materials Science +16