R. A. Hogg

Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate

Huiyun Liu, Ting Wang, Qi Jiang et al. · Nature Photonics · 2011 · 380 citations

Engineering, Electrical Engineering, Materials Science +14

Detection of single photons using a field-effect transistor gated by a layer of quantum dots

A. J. Shields, M. P. O’Sullivan, I. Farrer et al. · Applied Physics Letters · 2000 · 152 citations

Engineering, Electrical Engineering, Materials Science +17

High-performance three-layer 1.3-/spl mu/m InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents

H.Y. Liu, David Childs, T. J. Badcock et al. · IEEE Photonics Technology Letters · 2005 · 146 citations

Engineering, Electrical Engineering, Materials Science +16

Structural and optical properties of type II GaSb/GaAs self-assembled quantum dots grown by molecular beam epitaxy

K. Suzuki, R. A. Hogg, Yasuhiko Arakawa · Journal of Applied Physics · 1999 · 133 citations

Natural Sciences, Materials Science, Physics +17

Long-wavelength light emission and lasing from InAs∕GaAs quantum dots covered by a GaAsSb strain-reducing layer

Hauyu Baobab Liu, M. J. Steer, T. J. Badcock et al. · Applied Physics Letters · 2005 · 127 citations

Natural Sciences, Materials Engineering, Materials Science +16