Low-threshold disorder-defined buried heterostructure strained-layer Al<i>y</i>Ga1−<i>y</i>As-GaAs-In<i>x</i>Ga1−<i>x</i>As quantum well lasers (λ∼910 nm)

Abstract

The stability of strained-layer Aly Ga1−yAs-GaAs-InxGa1−x As single quantum well heterostructures against thermal processing is examined using transmission and scanning electron microscopy. A self-aligned impurity-induced layer disordering process employing Si-O diffusion is used to produce buried heterostructure stripe geometry lasers with a pseudomorphic InxGa1−x As quantum well active region. The 2-μm-wide stripe laser diodes exhibit high efficiency (η∼41%/facet), low threshold (Ith =7 mA), and high output power (Pout &amp;gt;20 mW/facet).