S. Yamasaki

Effects of surface treatments and metal work functions on electrical properties at <i>p</i>-GaN/metal interfaces

H. Ishikawa, Setsuko Kobayashi, Yasuo Koide et al. · Journal of Applied Physics · 1997 · 220 citations

Materials Science, Semiconductor Technology, Electrical Engineering +13

Schottky barriers and contact resistances on <i>p</i>-type GaN

Tomohiko Mori, Takahiro Kozawa, Takeshi Ohwaki et al. · Applied Physics Letters · 1996 · 205 citations

Materials Science, Semiconductor Technology, Electrical Engineering +10

Doping of GaN with Si and properties of blue m/i/n/n+ GaN LED with Si-doped n+-layer by MOVPE

Norikatsu Koide, Hisaki Kato, M. Sassa et al. · Journal of Crystal Growth · 1991 · 125 citations

Materials Engineering, Semiconductor Technology, Electrical Engineering +7

<i>p</i>-type conduction in Mg-doped Ga0.91In0.09N grown by metalorganic vapor-phase epitaxy

S. Yamasaki, Seiji Asami, N. Shibata et al. · Applied Physics Letters · 1995 · 87 citations

Mg Acceptor, P-type Conduction, Engineering +16

GaN/GaInN/GaN Double Heterostructure Light Emitting Diode Fabricated Using Plasma-Assisted Molecular Beam Epitaxy

Hiromitsu Sakai, Takashi Koide, H. Suzuki et al. · Japanese Journal of Applied Physics · 1995 · 51 citations

Wide-bandgap Semiconductor, Photonics, Electrical Engineering +11