S. Yamasaki - Concepedia

Author

S. Yamasaki

Toyoda Gosei (Japan)

Also Known As

S. Yamasaki, Shiro Yamasaki

Publications

837

Citations

H-Index

Concepts

All Affiliations

Toyoda Gosei (Japan)Meijo University Kyoto University Toyota Central Research and Development Laboratories (Japan)

About

S. Yamasaki is an author at Toyoda Gosei (Japan) specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	9	9	802
2	Applied Physics	9	9	802
3	Electrical Engineering	8	8	754
4	Chemical Engineering	1	1	220
5	Materials Engineering	1	1	125

S. Yamasaki

Publications

822

Citations

H-Index

Page 1

	Year	Citations
Effects of surface treatments and metal work functions on electrical properties at <i>p</i>-GaN/metal interfaces H. Ishikawa, Setsuko Kobayashi, Yasuo Koide, Journal of Applied Physics Materials ScienceSemiconductor TechnologyElectrical EngineeringChemical EngineeringEngineering	1997	220
Schottky barriers and contact resistances on <i>p</i>-type GaN Tomohiko Mori, Takahiro Kozawa, Takeshi Ohwaki, Applied Physics Letters Materials ScienceSemiconductor TechnologyElectrical EngineeringWide-bandgap SemiconductorEngineering	1996	205
Doping of GaN with Si and properties of blue m/i/n/n+ GaN LED with Si-doped n+-layer by MOVPE Norikatsu Koide, Hisaki Kato, M. Sassa, Journal of Crystal Growth Materials EngineeringSemiconductor TechnologyElectrical EngineeringWide-bandgap SemiconductorEngineering	1991	125
<i>p</i>-type conduction in Mg-doped Ga0.91In0.09N grown by metalorganic vapor-phase epitaxy S. Yamasaki, Seiji Asami, N. Shibata, Applied Physics Letters Mg AcceptorP-type ConductionEngineeringCubic Boron NitrideOptoelectronic Devices	1995	87
GaN/GaInN/GaN Double Heterostructure Light Emitting Diode Fabricated Using Plasma-Assisted Molecular Beam Epitaxy Hiromitsu Sakai, Takashi Koide, H. Suzuki, Japanese Journal of Applied Physics Wide-bandgap SemiconductorPhotonicsElectrical EngineeringSolid-state LightingHigh-quality Gan	1995	51
High-quality GaInN/GaN multiple quantum wells Masayoshi Koike, S. Yamasaki, S. Nagai, Applied Physics Letters Materials ScienceWide-bandgap SemiconductorEngineeringPhysicsBulk Ga0.91in0.09n	1996	48
Dependence of electrical properties on work functions of metals contacting to p-type GaN Yasuo Koide, H. Ishikawa, S. Kobayashi, Applied Surface Science Materials ScienceWide-bandgap SemiconductorElectrical EngineeringEngineeringApplied Physics	1997	34
Light-Emitting Devices Based on Gallium Nitride and Related Compound Semiconductors Masayoshi Koike, Naoki Shibata, S. Yamasaki, MRS Proceedings Electrical EngineeringOptical MaterialsEngineeringSolid-state LightingApplied Physics	1995	22
Room Temperature CW Operation of GaN-based Blue Laser Diodes by GaInN/GaN optical guiding layers Masayoshi Koike, S. Yamasaki, Yuta Tezen, MRS Internet Journal of Nitride Semiconductor Research	2000	20
<title>GaInN/GaN multiple quantum wells green LEDs</title> Masayoshi Koike, Norikatsu Koide, Shigeo Asami, Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE White OledQuantum SciencePhotonicsElectrical EngineeringEngineering	1997	10

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