<i>p</i>-type conduction in Mg-doped Ga0.91In0.09N grown by metalorganic vapor-phase epitaxy

Abstract

p-type conduction in InN-containing nitrides doped with Mg has been achieved by metalorganic vapor-phase epitaxy. The hole concentration at room temperature is as high as 7×1017 cm−3. The activation energy of a Mg acceptor is estimated to be 204 meV. D–A pair emission with peak wavelength of about 405 nm is enhanced by thermal annealing.