GaN/GaInN/GaN Double Heterostructure Light Emitting Diode Fabricated Using Plasma-Assisted Molecular Beam Epitaxy

Abstract

High-quality GaN and Ga 1- x In x N ( x ≤0.2) have been grown by RF-plasma-assisted molecular beam epitaxy (RF-MBE) on the GaN/AlN/sapphire substrate grown by metalorganic vapor-phase epitaxy for the first time. GaN and GaInN showed intense near-band-edge photoluminescence (PL) at room temperature. A double hetero-structure (DH) of p -GaN:Mg/Ga 0.8 In 0.2 N/ n -GaN has been fabricated. The DH light emitting diode showed intense violet emission upon current injection at room temperature.