Takayoshi Tsutsumi

Atomic layer etching of SiO2 by alternating an O2 plasma with fluorocarbon film deposition

Takayoshi Tsutsumi, Hiroki Kondo, Masaru Hori et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2016 · 54 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Polyethylene terephthalate (PET) surface modification by VUV and neutral active species in remote oxygen or hydrogen plasmas

Yan Zhang, Kenji Ishikawa, Miran Mozetič et al. · Plasma Processes and Polymers · 2019 · 41 citations

Natural Sciences, Chemistry, Materials Science +17

Influences of substrate temperatures on etch rates of PECVD-SiN thin films with a CF4/H2 plasma

Shih‐Nan Hsiao, Kazuya Nakane, Takayoshi Tsutsumi et al. · Applied Surface Science · 2020 · 41 citations

Natural Sciences, Materials Engineering, Materials Science +17

Progress and perspectives in dry processes for nanoscale feature fabrication: fine pattern transfer and high-aspect-ratio feature formation

Taku Iwase, Yoshito Kamaji, Song Kang et al. · Japanese Journal of Applied Physics · 2019 · 39 citations

Engineering, Manufacturing Engineering, Materials Science +15

<i>In Situ</i> Monitoring of Surface Reactions during Atomic Layer Etching of Silicon Nitride Using Hydrogen Plasma and Fluorine Radicals

Kazuya Nakane, René H. J. Vervuurt, Takayoshi Tsutsumi et al. · ACS Applied Materials & Interfaces · 2019 · 39 citations

Natural Sciences, Materials Engineering, Materials Science +17