Kazuya Nakane

Influences of substrate temperatures on etch rates of PECVD-SiN thin films with a CF4/H2 plasma

Shih‐Nan Hsiao, Kazuya Nakane, Takayoshi Tsutsumi et al. · Applied Surface Science · 2020 · 41 citations

Natural Sciences, Materials Engineering, Materials Science +17

<i>In Situ</i> Monitoring of Surface Reactions during Atomic Layer Etching of Silicon Nitride Using Hydrogen Plasma and Fluorine Radicals

Kazuya Nakane, René H. J. Vervuurt, Takayoshi Tsutsumi et al. · ACS Applied Materials & Interfaces · 2019 · 39 citations

Natural Sciences, Materials Engineering, Materials Science +17

Study of optical emission spectroscopy using modified Boltzmann plot in dual-frequency synchronized pulsed capacitively coupled discharges with DC bias at low-pressure in Ar/O₂/C₄F₈ plasma etching process

Bibhuti B. Sahu, Kazuya Nakane, Kenji Ishikawa et al. · Physical Chemistry Chemical Physics · 2022 · 12 citations

Natural Sciences, Physics, Plasma Physics +14

Ion-induced interface defects in a-Si:H/c-Si heterojunction: possible roles and kinetics of hot mobile hydrogens

Shota Nunomura, Takayoshi Tsutsumi, Kazuya Nakane et al. · Japanese Journal of Applied Physics · 2022 · 11 citations · Full text

Engineering, Materials Engineering, Materials Science +17