Suguru Mase

Novel fully vertical GaN p–n diode on Si substrate grown by metalorganic chemical vapor deposition

Suguru Mase, Yuya Urayama, Takeaki Hamada et al. · Applied Physics Express · 2016 · 42 citations

Engineering, Electrical Engineering, Materials Science +17

Demonstration of fully vertical GaN‐on‐Si Schottky diode

K. Zhang, Suguru Mase, K. Nakamura et al. · Electronics Letters · 2017 · 36 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Effect of Drift Layer on the Breakdown Voltage of Fully-Vertical GaN-on-Si p-n Diodes

Suguru Mase, Takeaki Hamada, Joseph J. Freedsman et al. · IEEE Electron Device Letters · 2017 · 36 citations

Engineering, Electrical Engineering, Materials Science +17

Evaluation of Electron Trapping Speed of AlGaN/GaN HEMT With Real-Time Electroluminescence and Pulsed $I{-}V$ Measurements

Akio Wakejima, Amalraj Frank Wilson, Suguru Mase et al. · IEEE Transactions on Electron Devices · 2013 · 19 citations

Engineering, Electrical Engineering, Materials Science +17