Maurizio Moschetti

SiCILIA—Silicon Carbide Detectors for Intense Luminosity Investigations and Applications

S. Tudisco, Francesco La Via, C. Agodi et al. · Sensors · 2018 · 266 citations · Full text

Engineering, Nuclear Engineering, Physics +17

Partial Recovery of Dynamic <i>R</i> _ON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs

Marcello Cioni, Nicolò Zagni, Ferdinando Iucolano et al. · IEEE Transactions on Electron Devices · 2021 · 61 citations · Full text

Engineering, Electrical Engineering, Materials Science +14

Threshold voltage instability by charge trapping effects in the gate region of p-GaN HEMTs

Giuseppe Greco, Patrick Fiorenza, Filippo Giannazzo et al. · Applied Physics Letters · 2022 · 40 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Experimental and numerical investigation of Poole–Frenkel effect on dynamic <i>R</i> _ON transients in C-doped p-GaN HEMTs

Nicolò Zagni, Marcello Cioni, Ferdinando Iucolano et al. · Semiconductor Science and Technology · 2021 · 17 citations · Full text

Engineering, Electrical Engineering, Physics +17

A high stability and uniformity W micro hot plate

Maria Eloisa Castagna, R. Modica, Salvatore Cascino et al. · Sensors and Actuators A Physical · 2018 · 16 citations

Engineering, Materials Engineering, Materials Science +10