Marcello Cioni

GaN-based power devices: Physics, reliability, and perspectives

Matteo Meneghini, Carlo De Santi, Idriss Abid et al. · Journal of Applied Physics · 2021 · 572 citations · Full text

Wide-bandgap Semiconductor, Engineering, Power Devices +18

Partial Recovery of Dynamic <i>R</i> _ON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs

Marcello Cioni, Nicolò Zagni, Ferdinando Iucolano et al. · IEEE Transactions on Electron Devices · 2021 · 55 citations · Full text

Device Modeling, Wide-bandgap Semiconductor, Electrical Engineering +12

Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs

Marcello Cioni, Nicolò Zagni, L. Selmi et al. · IEEE Transactions on Electron Devices · 2021 · 34 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Gan Hemts +12

Mechanisms Underlying the Bidirectional <i>V</i> _T Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs

Nicolò Zagni, Marcello Cioni, Alessandro Chini et al. · IEEE Transactions on Electron Devices · 2021 · 18 citations · Full text

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +14

Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs

Marcello Cioni, Alessandro Bertacchini, Alessandro Mucci et al. · Electronics · 2021 · 17 citations · Full text

Semiconductor Technology, Electrical Engineering, Vth Reduction +14