Armen V. Sogoyan

The effect of emitter junction bias on the low dose-rate radiation response of bipolar devices

V.B. Maslov, S.V. Cherepko, I.N. Shvetzov-Shilovsky et al. · IEEE Transactions on Nuclear Science · 1997 · 50 citations

Device Modeling, Experimental Results, Electrical Engineering +14

Radiation Response of Bipolar Transistors at Various Irradiation Temperatures and Electric Biases: Modeling and Experiment

Gennady I. Zebrev, D.Y. Pavlov, A.Y. Nikiforov et al. · IEEE Transactions on Nuclear Science · 2006 · 31 citations

Device Modeling, Electrical Engineering, Bipolar Transistors +14

Temperature Dependence of MCU Sensitivity in 65 nm CMOS SRAM

Anna B. Boruzdina, Armen V. Sogoyan, Anatoly A. Smolin et al. · IEEE Transactions on Nuclear Science · 2015 · 30 citations

Electrical Engineering, Engineering, Vlsi Design +12

Method for integrated circuits total ionizing dose hardness testing based on combined gamma- and x-ray irradiation facilities

Armen V. Sogoyan, Alexander Y. Nikiforov, Dmitry V. Boychenko · Facta universitatis - series Electronics and Energetics · 2014 · 23 citations · Full text

Radiation Exposure, Radiation Protection, Radiation Testing +17

Compendium of SEE comparative results under ion and laser irradiation

A. I. Chumakov, Alexander Pechenkin, D. V. Savchenkov et al. · 2013 · 22 citations

Ion Implantation, Engineering, Segr Comparative Results +12