Concepedia

I.N. Shvetzov-Shilovsky

IS

Statistics

Publications

3

Citations

112

H-Index

3

Active since

1993

Affiliations

Institute of Engineering Physics(Current)

I.N. Shvetzov-Shilovsky is an author at Institute of Engineering Physics specializing in physics, device modeling, and microelectronics.

Top concepts

Publications per year

1993–1997

3

Publications

3

The effect of emitter junction bias on the low dose-rate radiation response of bipolar devices

V.B. Maslov, S.V. Cherepko, I.N. Shvetzov-Shilovsky et al. · IEEE Transactions on Nuclear Science · 1997 · 50 citations

, , +14

Use of MOS structures for the investigation of low-dose-rate effects in bipolar transistors

V.V. Belyakov, A.V. Shal'nov, I.N. Shvetzov-Shilovsky · IEEE Transactions on Nuclear Science · 1995 · 44 citations

, , +14

Three-point method of prediction of MOS device response in space environments

V.V. Belyakov, S.V. Cherepko, I.N. Shvetzov-Shilovsky · IEEE Transactions on Nuclear Science · 1993 · 18 citations

, , +22

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