V.V. Belyakov

The effect of emitter junction bias on the low dose-rate radiation response of bipolar devices

V.B. Maslov, S.V. Cherepko, I.N. Shvetzov-Shilovsky et al. · IEEE Transactions on Nuclear Science · 1997 · 50 citations

Device Modeling, Experimental Results, Electrical Engineering +14

Use of MOS structures for the investigation of low-dose-rate effects in bipolar transistors

V.V. Belyakov, A.V. Shal'nov, I.N. Shvetzov-Shilovsky · IEEE Transactions on Nuclear Science · 1995 · 44 citations

Device Modeling, Electrical Engineering, Engineering +14

Methods for the Prediction of Total-Dose Effects on Modern Integrated Semiconductor Devices in Space: A Review

V.V. Belyakov, Gennady I. Zebrev, Armen V. Sogoyan et al. · Russian Microelectronics · 2003 · 21 citations

IC’s radiation effects modeling and estimation

V.V. Belyakov, A. I. Chumakov, A.Y. Nikiforov et al. · Microelectronics Reliability · 2000 · 20 citations

Engineering, Health Sciences, Radiation Monitoring +5

Proposed two-level Acceptor-Donor (AD) center and the nature of switching traps in irradiated MOS structures

S.V. Cherepko, Armen V. Sogoyan, V.V. Belyakov et al. · IEEE Transactions on Nuclear Science · 1996 · 20 citations

Ii-vi Semiconductor, Transition Metal Chalcogenides, Electrical Engineering +14