Properties of the main Mg-related acceptors in GaN from optical and structural studies

B. Ḿonemar, Carl Hemmingsson, J. P. Bergman, +8

Journal of Applied Physics

Wide-bandgap SemiconductorVarious Luminescence FeaturesOptical MaterialsEngineeringChemistry +16

Effect of silicon and oxygen doping on donor bound excitons in bulk GaN

S. Khromov, Carl Hemmingsson, Lars Hultman, +1

Physical Review B

Wide-bandgap SemiconductorEngineeringBulk GanOptoelectronic DevicesSemiconductors +16

Luminescence related to high density of Mg-induced stacking faults in homoepitaxially grown GaN

S. Khromov, Carl Hemmingsson, Hiroshi Amano, +2

Physical Review B

Materials ScienceHigh DensityWide-bandgap SemiconductorEngineeringCrystalline Defects +13

Growth of GaN nanotubes by halide vapor phase epitaxy

Carl Hemmingsson, S. Khromov, Bo Monemar

Nanotechnology

Optical properties of C-doped bulk GaN wafers grown by halide vapor phase epitaxy

S. Khromov, Carl Hemmingsson, B. Monemar, +1

Journal of Applied Physics

Materials ScienceSemiconductorsElectrical EngineeringOptical MaterialsNear Band Gap +12

Atom probe tomography study of Mg-doped GaN layers

S. Khromov, D Gregorius, Rüdiger Schiller, +6

Nanotechnology

Wide-bandgap SemiconductorMg Cluster FormationEngineeringPhysicsMicroscopy +11

Luminescence of Acceptors in Mg-Doped GaN

Bo Monemar, S. Khromov, Peder Bergman, +6

Japanese Journal of Applied Physics

Wide-bandgap SemiconductorPhotoluminescenceEngineeringPhysicsOptical Properties +10

Correlation between Si doping and stacking fault related luminescence in homoepitaxial m-plane GaN

S. Khromov, B. Ḿonemar, V. Avrutin, +2

Applied Physics Letters

SemiconductorsWide-bandgap SemiconductorElectrical EngineeringHomoepitaxial M-plane GanEngineering +9

Optical and structural studies of homoepitaxially grown <i>m</i>-plane GaN

S. Khromov, B. Monemar, V. Avrutin, +3

Applied Physics Letters

SemiconductorsWide-bandgap SemiconductorOptical MaterialsEngineeringCl Mapping +10