S. Khromov

Properties of the main Mg-related acceptors in GaN from optical and structural studies

B. Ḿonemar, Carl Hemmingsson, J. P. Bergman et al. · Journal of Applied Physics · 2014 · 54 citations · Full text

Wide-bandgap Semiconductor, Various Luminescence Features, Optical Materials +18

Effect of silicon and oxygen doping on donor bound excitons in bulk GaN

S. Khromov, Carl Hemmingsson, Lars Hultman et al. · Physical Review B · 2011 · 48 citations · Full text

Wide-bandgap Semiconductor, Engineering, Bulk Gan +18

Luminescence related to high density of Mg-induced stacking faults in homoepitaxially grown GaN

S. Khromov, Carl Hemmingsson, Hiroshi Amano et al. · Physical Review B · 2011 · 36 citations · Full text

Materials Science, High Density, Wide-bandgap Semiconductor +15

Growth of GaN nanotubes by halide vapor phase epitaxy

Carl Hemmingsson, S. Khromov, Bo Monemar · Nanotechnology · 2011 · 28 citations · Full text

Optical properties of C-doped bulk GaN wafers grown by halide vapor phase epitaxy

S. Khromov, Carl Hemmingsson, B. Monemar et al. · Journal of Applied Physics · 2014 · 26 citations · Full text

Materials Science, Semiconductors, Electrical Engineering +14