N. Novkovski

Oxygen annealing modification of conduction mechanism in thin rf sputtered Ta2O5 on Si

E. Atanassova, N. Novkovski, A. Paskaleva et al. · Solid-State Electronics · 2002 · 65 citations

Materials Science, Materials Engineering, Engineering +9

Properties of SnO2:F films prepared on glass substrates by the spraying method

G. Mavrodiev, M. Gajdardziska, N. Novkovski · Thin Solid Films · 1984 · 48 citations

Materials Science, Materials Engineering, Engineering +9

A comprehensive model for the I –V characteristics of metal-Ta 2 O 5 /SiO 2 -Si structures

N. Novkovski, E. Atanassova · Applied Physics A · 2006 · 39 citations

Materials Engineering, Materials Science, Semiconductor Device +6

Optimization of Thin Si Oxynitride Films Produced by Rapid Thermal Processing for Applications in EEPROMs

M. Dutoit, P. Letourneau, Jing Mi et al. · Journal of The Electrochemical Society · 1993 · 39 citations

Engineering, Emerging Memory Technology, Kbit Memory Arrays +18

Conduction mechanisms and reliability of thermal Ta2O5–Si structures and the effect of the gate electrode

E. Atanassova, A. Paskaleva, N. Novkovski et al. · Journal of Applied Physics · 2005 · 34 citations

Engineering, Thermal Ta2o5–si Structures, Silicon On Insulator +18