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Optimization of Thin Si Oxynitride Films Produced by Rapid Thermal Processing for Applications in EEPROMs
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1993
Year
EngineeringEmerging Memory TechnologyKbit Memory ArraysOptoelectronic DevicesThin Film Process TechnologySilicon On InsulatorLight NitridationNanoelectronicsThin Film ProcessingMaterials ScienceMaterials EngineeringElectrical EngineeringOxide ElectronicsCareful AnalysisMicroelectronicsElectronic MaterialsApplied PhysicsSemiconductor MemoryThin FilmsChemical Vapor DepositionRapid Thermal Processing
We optimized thin reoxidized nitrided (ROXNOX) films produced by RTP on the basis of a careful analysis of the requirements of EEPROMs. The influence of oxidation, nitridation, and reoxidation parameters on charge‐trapping and breakdown during a constant current stress was studied in detail. We show that a very light nitridation gives a maximum nitrogen concentration at the interface and the largest increase in the endurance of the films under a high‐field stress. The physical basis of these results is discussed. The improvement was confirmed on complete 1 kbit memory arrays produced with a 3 μm CMOS process with self‐aligned contacts. Their lifetime was increased by at least an order of magnitude, up to more than 106 cycles.