Tzu-Kun Ku

A 4Mb embedded SLC resistive-RAM macro with 7.2ns read-write random-access time and 160ns MLC-access capability

Shyh-Shyuan Sheu, Meng‐Fan Chang, Ku-Feng Lin et al. · 2011 · 247 citations

Engineering, Computer Engineering, Computer Science +16

A High-Speed 7.2-ns Read-Write Random Access 4-Mb Embedded Resistive RAM (ReRAM) Macro Using Process-Variation-Tolerant Current-Mode Read Schemes

Meng‐Fan Chang, Shyh-Shyuan Sheu, Ku-Feng Lin et al. · IEEE Journal of Solid-State Circuits · 2013 · 97 citations

Engineering, Computer Engineering, Electrical Engineering +16

17.5 A 3T1R nonvolatile TCAM using MLC ReRAM with Sub-1ns search time

Meng‐Fan Chang, Chien-Chen Lin, Albert Lee et al. · 2015 · 89 citations

Engineering, Computer Engineering, Computer Science +15

Challenges and Circuit Techniques for Energy-Efficient On-Chip Nonvolatile Memory Using Memristive Devices

Meng‐Fan Chang, Albert Lee, Pin-Cheng Chen et al. · IEEE Journal on Emerging and Selected Topics in Circuits and Systems · 2015 · 70 citations

Engineering, Computer Engineering, Electrical Engineering +15

Novel Defects-Trapping ${\rm TaO}_{\rm X}/{\rm HfO}_{\rm X}$ RRAM With Reliable Self-Compliance, High Nonlinearity, and Ultra-Low Current

Yu-Sheng Chen, Heng-Yuan Lee, Pang-Shiu Chen et al. · IEEE Electron Device Letters · 2014 · 54 citations

Engineering, Electrical Engineering, Materials Science +17