M. Galiano

Shallow Trench Isolation for the 45-nm CMOS Node and Geometry Dependence of STI Stress on CMOS Device Performance

A. Tilke, Chris Stapelmann, M. Eller et al. · IEEE Transactions on Semiconductor Manufacturing · 2007 · 19 citations

Engineering, Vlsi Design, Integrated Circuits +18

STI Gap-Fill Technology with High Aspect Ratio Process for 45nm CMOS and beyond

A. Tilke, M. Culmsee, R. Jaiswal et al. · 2006 · 18 citations

Electrical Engineering, Physical Design (Electronics), Engineering +15

Vertical seeded melt growth of GaAs

Edith Bourret, J.B. Guitron, M. Galiano et al. · Journal of Crystal Growth · 1990 · 15 citations

Materials Engineering, Engineering, Crystal Growth Technology +4

Gap Fill and Film Reflow Capability of Subatmospheric Chemical Vapor Deposited Borophosphosilicate Glass

Stuardo Robles, Kathleen Russell, M. Galiano et al. · Journal of The Electrochemical Society · 1996 · 12 citations

Materials Science, Glass-ceramic, Chemical Engineering +15

High Temperature Subatmospheric Chemical Vapor Deposited Undoped Silicate Glass: A Solution for Next Generation Shallow Trench Isolation

Li-Qun Xia, Srinivas Nemani, M. Galiano et al. · Journal of The Electrochemical Society · 1999 · 12 citations

Materials Science, Glass-ceramic, Bond Reconstruction +12