Gap Fill and Film Reflow Capability of Subatmospheric Chemical Vapor Deposited Borophosphosilicate Glass

Stuardo Robles, Kathleen Russell, M. Galiano, Vantari Siva, Victoria Kithcart, B. C. Nguyen

Journal of The Electrochemical Society · 1996 · 12 citations · 0 references

Concepts

Abstract

This work presents a systematic process characterization of subatmospheric chemical vapor deposited (SACVD) borophosphosilicate glass (BPSG). The effects of deposition pressure, ozone concentration, ozone flow, and dopant concentration on the film reflow profile and film properties are presented. Our results indicate that a decrease in the deposition pressure from atmospheric conditions to 200 Torr provides more than a 200% increase in SACVD BPSG deposition rate without affecting film quality. Phosphorous is incorporated in the stable form of at all deposition pressures. Higher ozone concentrations improve SACVD BPSG film reflow and film properties. Moreover, at higher dopant concentrations, both film shrinkage and stress‐temperature hysteresis decrease.