Tian Xiang Dai

The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment

Arne Benjamin Renz, Vishal Ajit Shah, Oliver James Vavasour et al. · Journal of Applied Physics · 2020 · 28 citations · Full text

Engineering, Materials Engineering, Materials Science +17

The improvement of atomic layer deposited SiO2/4H-SiC interfaces via a high temperature forming gas anneal

Arne Benjamin Renz, Oliver James Vavasour, Peter Michael Gammon et al. · Materials Science in Semiconductor Processing · 2020 · 27 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Optimization of 1700-V 4H-SiC Semi-Superjunction Schottky Rectifiers With Implanted P-Pillars for Practical Realization

G.W.C. Baker, Peter Michael Gammon, Arne Benjamin Renz et al. · IEEE Transactions on Electron Devices · 2022 · 16 citations · Full text

Engineering, Electrical Engineering, Materials Science +15

Optimization of 1700-V 4H-SiC Superjunction Schottky Rectifiers With Implanted P-Pillars for Practical Realization

G.W.C. Baker, C.W. Chan, Arne Benjamin Renz et al. · IEEE Transactions on Electron Devices · 2021 · 14 citations · Full text

Engineering, Electrical Engineering, Materials Engineering +15

High Temperature Nitridation of 4H-SiC MOSFETs

Rong Hua, Yogesh Sharma, Tian Xiang Dai et al. · Materials science forum · 2016 · 11 citations · Full text

Engineering, Electrical Engineering, Materials Science +17