Oliver James Vavasour

Modelling the inhomogeneous SiC Schottky interface

Peter Michael Gammon, Amador Pérez‐Tomás, Vishal Ajit Shah et al. · Journal of Applied Physics · 2013 · 94 citations · Full text

Significant Inhomogeneity, Engineering, Semiconductor Device +16

The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment

Arne Benjamin Renz, Vishal Ajit Shah, Oliver James Vavasour et al. · Journal of Applied Physics · 2020 · 27 citations · Full text

Materials Engineering, Materials Science, Electrical Engineering +11

The improvement of atomic layer deposited SiO2/4H-SiC interfaces via a high temperature forming gas anneal

Arne Benjamin Renz, Oliver James Vavasour, Peter Michael Gammon et al. · Materials Science in Semiconductor Processing · 2020 · 23 citations · Full text

Engineering, Silicon On Insulator, Atomic Layer +19

The Optimization of 3.3 kV 4H-SiC JBS Diodes

Arne Benjamin Renz, Vishal Ajit Shah, Oliver James Vavasour et al. · IEEE Transactions on Electron Devices · 2021 · 14 citations · Full text

Semiconductor Technology, Electrical Engineering, Electronic Devices +12

Optimization of 1700-V 4H-SiC Semi-Superjunction Schottky Rectifiers With Implanted P-Pillars for Practical Realization

G.W.C. Baker, Peter Michael Gammon, Arne Benjamin Renz et al. · IEEE Transactions on Electron Devices · 2022 · 14 citations · Full text

Trench Sidewalls, Semiconductor Technology, Electrical Engineering +10