Tao Li

Requirements for low intermodulation distortion in GaN-Al/sub x/Ga/sub 1-x/N high electron mobility transistors: a model assessment

Tao Li, R. P. Joshi, R. D. del Rosario · IEEE Transactions on Electron Devices · 2002 · 27 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +13

Vertical <i>β</i>-Ga2O3 metal–insulator–semiconductor diodes with an ultrathin boron nitride interlayer

Mingfei Xu, Abhijit Biswas, Tao Li et al. · Applied Physics Letters · 2023 · 18 citations

Semiconductors, Oxide Heterostructures, Electrical Engineering +15

GaN-Based Threshold Switching Behaviors at High Temperatures Enabled by Interface Engineering for Harsh Environment Memory Applications

Kai Fu, Shisong Luo, Houqiang Fu et al. · IEEE Transactions on Electron Devices · 2023 · 16 citations

Wide-bandgap Semiconductor, Non-volatile Memory, Engineering +16

Reduced trap state density in AlGaN/GaN HEMTs with low-temperature CVD-grown BN gate dielectric

Ziyi He, Xiang Zhang, Tymofii S. Pieshkov et al. · Applied Physics Letters · 2024 · 13 citations

Structural, optical, and thermal properties of BN thin films grown on diamond via pulsed laser deposition

Abhijit Biswas, Gustavo A. Alvarez, Tao Li et al. · Physical Review Materials · 2023 · 10 citations · Full text