Y. Kim

35% drive current improvement from recessed-SiGe drain extensions on 37 nm gate length PMOS

P.R. Chidambaram, B. Smith, Lindsey Hall et al. · 2004 · 89 citations

Engineering, Electrical Engineering, Materials Science +15

Layout impact on the performance of a locally strained PMOSFET

S. Eneman, Peter Verheyen, R. Rooyackers et al. · 2005 · 44 citations

Engineering, Electrical Engineering, Microelectronics +16

High performance germanium n-MOSFET with antimony dopant activation beyond 1×10<sup>20</sup> cm<sup>−3</sup>

Gaurav Thareja, Jiale Liang, Saurabh Chopra et al. · 2010 · 31 citations

Engineering, Electrical Engineering, Materials Science +10

Epitaxial Si punch-through based selector for bipolar RRAM

P. Bafna, P. Karkare, S. Srinivasan et al. · 2012 · 12 citations

Engineering, Electrical Engineering, Materials Science +16