Osbert Cheng

Hot carrier effect on gate-induced drain leakage current in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors

Chih-Hao Dai, Ting‐Chang Chang, Ann‐Kuo Chu et al. · Applied Physics Letters · 2011 · 36 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Comparison of the trap behavior between ZrO₂ and HfO₂ gate stack nMOSFETs by 1/f noise and random telegraph noise

Bo Chin Wang, San Lein Wu, Yu Ying Lu et al. · IEEE Electron Device Letters · 2012 · 33 citations

Engineering, Electrical Engineering, Materials Science +16

Importance of $\Delta V_{{\text {DIBLSS}}}/({I}_{{\text {on}}} /{I}_{{\text {off}}})$ in Evaluating the Performance of n-Channel Bulk FinFET Devices

Yi-Chuen Eng, Chih-Chiang Tseng, Ren Huang et al. · IEEE Journal of the Electron Devices Society · 2018 · 31 citations · Full text

Engineering, Electrical Engineering, Electronic Materials +6

Ultra low p-type SiGe contact resistance FinFETs with Ti silicide liner using cryogenic contact implantation amorphization and Solid-Phase Epitaxial Regrowth (SPER)

Yu‐Chi Yang, N. Breil, C. Y. Yang et al. · 2016 · 26 citations

Engineering, Electrical Engineering, Materials Science +13

Impact of static and dynamic stress on threshold voltage instability in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors

Chih-Hao Dai, Ting‐Chang Chang, Ann‐Kuo Chu et al. · Applied Physics Letters · 2011 · 25 citations

Engineering, Electrical Engineering, Materials Science +17