V. A. Odnoblyudov

Demonstration of GaN Integrated Half-Bridge With On-Chip Drivers on 200-mm Engineered Substrates

Xiangdong Li, Karen Geens, Weiming Guo et al. · IEEE Electron Device Letters · 2019 · 74 citations

Engineering, Electrical Engineering, Materials Science +16

InAs/InGaAsN quantum dots emitting at 1.55μm grown by molecular beam epitaxy

V. M. Ustinov, A. Yu. Egorov, V. A. Odnoblyudov et al. · Journal of Crystal Growth · 2003 · 44 citations

Engineering, Materials Engineering, Materials Science +12

Metamorphic growth for application in long-wavelength (1.3–1.55 µm) lasers and MODFET-type structures on GaAs substrates

Elizaveta Semenova, A. E. Zhukov, S. S. Mikhrin et al. · Nanotechnology · 2004 · 41 citations

Engineering, Materials Engineering, Materials Science +17

Thermodynamic analysis of the MBE growth of GaInAsN

V. A. Odnoblyudov, A. Yu. Egorov, A. R. Kovsh et al. · Semiconductor Science and Technology · 2001 · 41 citations

Natural Sciences, Materials Engineering, Materials Science +17

Electrothermal evaluation of thick GaN epitaxial layers and AlGaN/GaN high-electron-mobility transistors on large-area engineered substrates

Travis J. Anderson, Andrew D. Koehler, Marko J. Tadjer et al. · Applied Physics Express · 2017 · 33 citations

Engineering, Electrical Engineering, Materials Science +17