P. Maury

A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz f<inf>T</inf> / 370 GHz f<inf>MAX</inf> HBT and high-Q millimeter-wave passives

P. Chevalier, G. Avenier, G. Ribes et al. · 2014 · 173 citations

Engineering, Electrical Engineering, Microelectronics +15

14nm FDSOI technology for high speed and energy efficient applications

O. Weber, E. Josse, F. Andrieu et al. · 2014 · 89 citations

Engineering, Computer Engineering, Electrical Engineering +15

The role of ultraviolet radiation during ultralow k films curing: Strengthening mechanisms and sacrificial porogen removal

A. Zenasni, V. Jousseaume, Philippe Holliger et al. · Journal of Applied Physics · 2007 · 61 citations

Natural Sciences, Materials Engineering, Materials Science +15

A comparison of the mechanical stability of silicon nitride films deposited with various techniques

P. Morin, Gaetan Raymond, Daniel L. Benoit et al. · Applied Surface Science · 2012 · 46 citations

Natural Sciences, Materials Engineering, Materials Science +16

Use of microsecond current prepulse for dramatic improvements of wire array Z-pinch implosion

H. Calamy, F. Lassalle, A. Loyen et al. · Physics of Plasmas · 2008 · 41 citations

Engineering, Electrical Engineering, Mechanical Engineering +7