F. Ivaldi

Growth and characterizations of semipolar (112¯2) InN

Duc V. Dinh, D. Skuridina, Sergej Solopow et al. · Journal of Applied Physics · 2012 · 26 citations

Engineering, Materials Engineering, Materials Science +17

Growth mode transition and relaxation of thin InGaN layers on GaN (0001)

Markus Pristovsek, Abdul Kadir, Tilman Schwaner et al. · Journal of Crystal Growth · 2013 · 21 citations

Natural Sciences, Materials Science, Physics +12

Thermal annealing of molecular beam epitaxy-grown InGaN/GaN single quantum well

Nils Asmus Kristian Kaufmann, A. Dussaigne, D. Martin et al. · Semiconductor Science and Technology · 2012 · 16 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Investigation of the In composition in InGaN/GaN quantum wells deposited by MOVPE and/or MBE with emission from violet to green

P. Ruterana, Jean‐Louis Doualan, M. P. Chauvat et al. · physica status solidi (b) · 2011 · 15 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Influence of a GaN Cap Layer on the Morphology and the Physical Properties of Embedded Self-Organized InN Quantum Dots on GaN(0001) Grown by Metal–Organic Vapour Phase Epitaxy

F. Ivaldi, S. Kret, Markus Pristovsek et al. · Japanese Journal of Applied Physics · 2011 · 12 citations

Engineering, Materials Engineering, Materials Science +17