A. Zanandrea

Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress

Gaudenzio Meneghesso, Matteo Meneghini, Antonio Stocco et al. · Microelectronic Engineering · 2013 · 54 citations

Materials Engineering, Hot Electron Stress, Electrical Engineering +6

GaN-Based Power HEMTs: Parasitic, Reliability and High Field Issues

Gaudenzio Meneghesso, Matteo Meneghini, Davide Bisi et al. · ECS Transactions · 2013 · 19 citations

Wide-bandgap Semiconductor, Gan-based Power Hemts, Electrical Engineering +14

Electrical and Electroluminescence Characteristics of AlGaN/GaN High Electron Mobility Transistors Operated in Sustainable Breakdown Conditions

Matteo Meneghini, A. Zanandrea, Fabiana Rampazzo et al. · Japanese Journal of Applied Physics · 2013 · 16 citations

Wide-bandgap Semiconductor, Electroluminescence Characteristics, Electrical Engineering +13

Single- and double-heterostructure GaN-HEMTs devices for power switching applications

A. Zanandrea, Eldad Bahat‐Treidel, Fabiana Rampazzo et al. · Microelectronics Reliability · 2012 · 15 citations · Full text

Electrical Engineering, Engineering, Power Switching Applications +4