Will Cai

A Modular 0.18 um Analog / RFCMOS Technology Comprising 32 GHz FT RF-LDMOS and 40V Complementary MOSFET Devices

Zachary Lee, R. Zwingman, Jie Zheng et al. · Proceedings of the ... Bipolar/BiCMOS Circuits and Technology Meeting/Proceedings of the ... BipolarBiCMOS Circuits and Technology Meeting · 2006 · 16 citations

Engineering, Electrical Engineering, Analog Electronics +16

RF Characteristics of a High-Performance, 10-fF/<tex>$muhbox m^2$</tex>Capacitor in a Deep Trench

Will Cai, S. Shastri, Gordy Grivna et al. · IEEE Electron Device Letters · 2004 · 13 citations

Engineering, Electrical Engineering, Materials Science +15

Comparison of PMOS and NMOS in a 14-nm RF FinFET technology: RF Characteristics and Compact Modeling

Jiabi Zhang, Guofu Niu, Will Cai et al. · 2020 · 12 citations

Engineering, Electrical Engineering, Circuit Theory +16

Intermodulation Linearity Characteristics of 14-nm RF FinFETs

Jiabi Zhang, Guofu Niu, Will Cai et al. · IEEE Transactions on Electron Devices · 2019 · 10 citations

Engineering, Electrical Engineering, Circuit Theory +16