Thirumal Thanigaivelan

Fin Doping by Hot Implant for 14nm FinFET Technology and Beyond

Bingxi Wood, Fareen Adeni Khaja, B. Colombeau et al. · ECS Transactions · 2013 · 28 citations

Electrical Engineering, Engineering, Finfet Device Structure +10

Physical understanding of cryogenic implant benefits for electrical junction stability

Fareen Adeni Khaja, B. Colombeau, Thirumal Thanigaivelan et al. · Applied Physics Letters · 2012 · 24 citations

Materials Science, Materials Engineering, Electrical Engineering +14

Contact Resistance Reduction for Strained N-MOSFETs With Silicon-Carbon Source/Drain Utilizing Aluminum Ion Implant and Aluminum Profile Engineering

Qian Zhou, Shao-Ming Koh, Thirumal Thanigaivelan et al. · IEEE Transactions on Electron Devices · 2013 · 20 citations

Materials Engineering, Materials Science, Electrical Engineering +14

Schottky barrier height tuning of silicides on p-type Si (100) by aluminum implantation and pulsed excimer laser anneal

Shao-Ming Koh, Xincai Wang, Thirumal Thanigaivelan et al. · Journal of Applied Physics · 2011 · 12 citations

Optical Materials, Engineering, Laser Applications +23

External Resistance Reduction by Nanosecond Laser Anneal in Si/SiGe CMOS Technology

Oleg Gluschenkov, Heng Wu, Kevin Brew et al. · 2018 · 12 citations

Selective Melting, Engineering, Laser Applications +21