Matthias Wieneke

Anisotropy of effective electron masses in highly doped nonpolar GaN

Martin Feneberg, Karsten Lange, Christian Lidig et al. · Applied Physics Letters · 2013 · 38 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +12

InGaN/GaN light-emitting diodes on Si(1 1 0) substrates grown by metal–organic vapour phase epitaxy

F. Reiher, A. Dadgar, J. Bläsing et al. · Journal of Physics D Applied Physics · 2009 · 36 citations

Optical Materials, Engineering, Optoelectronic Devices +18

Growth and coalescence behavior of semipolar $(11{\bar {2}}2)$ GaN on pre‐structured r‐plane sapphire substrates

Stephan Schwaiger, Sebastian Metzner, Thomas Wunderer et al. · physica status solidi (b) · 2010 · 35 citations

Leakage currents and Fermi-level shifts in GaN layers upon iron and carbon-doping

Aqdas Fariza, A. G. Lesnik, Silvio Neugebauer et al. · Journal of Applied Physics · 2017 · 30 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +14

Valence-band splitting and optical anisotropy of AlN

Georg Rossbach, Marcus Röppischer, P. Schley et al. · physica status solidi (b) · 2010 · 27 citations

Materials Science, Dielectric Function, Valence-band Splitting +12