Matthias Wieneke - Concepedia

Author

Matthias Wieneke

Otto-von-Guericke University Magdeburg ORCID

Also Known As

M Wieneke, M. Wieneke, Matthias Wieneke, Wieneke, M.

Publications

339

Citations

H-Index

Concepts

All Affiliations

Otto-von-Guericke University Magdeburg Technische Universität Ilmenau

About

Matthias Wieneke is an author at Otto-von-Guericke University Magdeburg specializing in applied physics, engineering, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	11	249
2	Applied Physics	10	11	249
3	Electrical Engineering	5	5	144
4	Chemistry	1	1	23
5	Materials Engineering	1	1	23

Matthias Wieneke

Publications

294

Citations

H-Index

Page 1

	Year	Citations
Anisotropy of effective electron masses in highly doped nonpolar GaN Martin Feneberg, Karsten Lange, Christian Lidig, Applied Physics Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringEffective Electron MassesEngineering	2013	38
InGaN/GaN light-emitting diodes on Si(1 1 0) substrates grown by metal–organic vapour phase epitaxy F. Reiher, A. Dadgar, J. Bläsing, Journal of Physics D Applied Physics Optical MaterialsEngineeringOptoelectronic DevicesSemiconductorsElectronic Devices	2009	36
Growth and coalescence behavior of semipolar $(11{\bar {2}}2)$ GaN on pre‐structured r‐plane sapphire substrates Stephan Schwaiger, Sebastian Metzner, Thomas Wunderer, physica status solidi (b)	2010	35
Leakage currents and Fermi-level shifts in GaN layers upon iron and carbon-doping Aqdas Fariza, A. G. Lesnik, Silvio Neugebauer, Journal of Applied Physics SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	2017	30
Valence-band splitting and optical anisotropy of AlN Georg Rossbach, Marcus Röppischer, P. Schley, physica status solidi (b) Materials ScienceDielectric FunctionValence-band SplittingOptical MaterialsEngineering	2010	27
Ge as a surfactant in metal-organic vapor phase epitaxy growth of a-plane GaN exceeding carrier concentrations of 1020 cm−3 Matthias Wieneke, H. De Witte, Karsten Lange, Applied Physics Letters Materials ScienceMaterials EngineeringElectrical EngineeringWide-bandgap SemiconductorEngineering	2013	23
Eliminating stacking faults in semi-polar GaN by AlN interlayers A. Dadgar, R. Ravash, Peter Veit, Applied Physics Letters Aluminium NitrideWide-bandgap SemiconductorEngineeringCrystalline DefectsPhysics	2011	22
Metalorganic vapor-phase epitaxy of GaN layers on Si substrates with Si(110) and other high-index surfaces F. Reiher, A. Dadgar, J. Bläsing, Journal of Crystal Growth Materials ScienceWide-bandgap SemiconductorEngineeringOther High-index SurfacesSurface Science	2009	19
Heavy Si doping: The key in heteroepitaxial growth of a‐plane GaN without basal plane stacking faults? Matthias Wieneke, Martin Noltemeyer, B. Bastek, physica status solidi (b) SemiconductorsMaterials ScienceElectrical EngineeringSemiconductor TechnologyEngineering	2010	17
Optical anisotropy of <i>A</i>‐ and <i>M</i>‐plane InN grown on free‐standing GaN substrates P. Schley, J. Räthel, E. Sakalauskas, physica status solidi (a) Wide-bandgap SemiconductorOptical MaterialsEngineeringOptical AnisotropyOptoelectronic Devices	2010	15

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