H. Flietner

Defects at the Si/SiO2 interface: Their nature and behaviour in technological processes and stress

W. Füssel, M. Schmidt, H. Angermann et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 1996 · 105 citations

Materials Science, Engineering, Nanoelectronics +9

The <i>E(k)</i> Relation for a Two‐Band Scheme of Semiconductors and the Application to the Metal‐Semiconductor Contact

H. Flietner · physica status solidi (b) · 1972 · 87 citations

Engineering, Semiconductor Physics, Semiconductor Materials +16

IR study of short-range and local order in SiO2 and SiOx films

I. P. Lisovskiĭ, V.B. Lozinskii, S.I. Frolov et al. · Journal of Non-Crystalline Solids · 1995 · 60 citations

Materials Science, Optical Materials, Siox Films +10

Investigation of native-oxide growth on HF-treated Si(111) surfaces by measuring the surface-state distribution

H. Angermann, Th. Dittrich, H. Flietner · Applied Physics A · 1994 · 45 citations

Materials Science, Surface Characterization, Engineering +10

Spectrum and nature of surface states

H. Flietner · Surface Science · 1974 · 42 citations

Surface Characterization, Engineering, Physics +7