The <i>E(k)</i> Relation for a Two‐Band Scheme of Semiconductors and the Application to the Metal‐Semiconductor Contact

Abstract

Abstract The E ( k ) behaviour is calculated for a two‐band scheme as an approximation for the vicinity of the forbidden gap of a semiconductor. An estimate is given for the validity of the effective mass approximation in the forbidden gap. Application is made to the metal‐semiconductor contact and it is shown that this model describes the experiments for semiconductors ranging from covalent to the ionic type.