Kaddour Lekhal

Record Pure Zincblende Phase in GaAs Nanowires down to 5 nm in Radius

Evelyne Gil, Geoffrey Avit, Yamina André et al. · Nano Letters · 2014 · 90 citations

Engineering, Nanowire Growth, Chemistry +20

Ultralong and Defect-Free GaN Nanowires Grown by the HVPE Process

Geoffrey Avit, Kaddour Lekhal, Yamina André et al. · Nano Letters · 2014 · 63 citations

Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

Kaddour Lekhal, B. Damilano, Thi Huong Ngo et al. · Applied Physics Letters · 2015 · 53 citations · Full text

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +12

Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures

Thi Huong Ngo, Bernard Gil, Pierre Valvin et al. · Applied Physics Letters · 2015 · 38 citations

Materials Science, Photonics, Internal Quantum Efficiency +13

Highly elongated vertical GaN nanorod arrays on Si substrates with an AlN seed layer by pulsed-mode metal–organic vapor deposition

Si‐Young Bae, Byung Oh Jung, Kaddour Lekhal et al. · CrystEngComm · 2016 · 38 citations

Materials Science, Aluminium Nitride, Engineering +14