Geoffrey Avit

Ultralong and Defect-Free GaN Nanowires Grown by the HVPE Process

Geoffrey Avit, Kaddour Lekhal, Yamina André et al. · Nano Letters · 2014 · 63 citations

Circumventing the miscibility gap in InGaN nanowires emitting from blue to red

Elissa Roche, Yamina André, Geoffrey Avit et al. · Nanotechnology · 2018 · 34 citations

Catalyst-assisted hydride vapor phase epitaxy of GaN nanowires: exceptional length and constant rod-like shape capability

Kaddour Lekhal, Geoffrey Avit, Yamina André et al. · Nanotechnology · 2012 · 30 citations

Influence of Silicon on the Nucleation Rate of GaAs Nanowires on Silicon Substrates

Hadi Hijazi, Guillaume Monier, Evelyne Gil et al. · The Journal of Physical Chemistry C · 2018 · 16 citations

Nucleation Rate, Nanowire Nucleation Rate, Engineering +16

Selective growth of ordered hexagonal InN nanorods

Mohammed Zeghouane, Geoffrey Avit, Thomas W. Cornelius et al. · CrystEngComm · 2019 · 16 citations

Materials Science, Engineering, Nanoscale Chemistry +12