Yamina André - Concepedia

Author

Yamina André

Centre National de la Recherche Scientifique ORCID

Also Known As

Andre, Yamina, André, Y-B., André, Y., André, Yamina, Y Andre, Y André, Y. Andre, Y. André, Y.-B. André, Yamina Andre

Publications

674

Citations

H-Index

Concepts

All Affiliations

Centre National de la Recherche Scientifique Université Clermont Auvergne Institut Pascal Institut Néel Sigma Clermont

About

Yamina André is an author at Centre National de la Recherche Scientifique specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	11	299
2	Applied Physics	10	11	299
3	Electrical Engineering	4	4	179
4	Chemistry	3	3	122
5	Natural Sciences	2	2	112

Yamina André

Publications

527

Citations

H-Index

Page 1

	Year	Citations
Record Pure Zincblende Phase in GaAs Nanowires down to 5 nm in Radius Evelyne Gil, Geoffrey Avit, Yamina André, Nano Letters EngineeringNanowire GrowthChemistrySemiconductor NanostructuresIi-vi Semiconductor	2014	90
Ultralong and Defect-Free GaN Nanowires Grown by the HVPE Process Geoffrey Avit, Kaddour Lekhal, Yamina André, Nano Letters	2014	63
Fast Growth Synthesis of GaAs Nanowires with Exceptional Length Mohammed Réda Ramdani, Evelyne Gil, Christine Leroux, Nano Letters	2010	50
Low dislocation density high-quality thick hydride vapour phase epitaxy (HVPE) GaN layers Yamina André, Agnès Trassoudaine, Julie Tourret, Journal of Crystal Growth Materials EngineeringMaterials ScienceElectrical EngineeringWide-bandgap SemiconductorEngineering	2007	42
Circumventing the miscibility gap in InGaN nanowires emitting from blue to red Elissa Roche, Yamina André, Geoffrey Avit, Nanotechnology	2018	34
Si Doping of Vapor–Liquid–Solid GaAs Nanowires: n-Type or p-Type? Hadi Hijazi, Guillaume Monier, Evelyne Gil, Nano Letters EngineeringSemiconductor MaterialsOptoelectronic DevicesSemiconductor NanostructuresSemiconductors	2019	32
Catalyst-assisted hydride vapor phase epitaxy of GaN nanowires: exceptional length and constant rod-like shape capability Kaddour Lekhal, Geoffrey Avit, Yamina André, Nanotechnology	2012	30
A complete crystallographic study of GaN epitaxial morphologies in selective area growth by hydride vapour phase epitaxy (SAG-HVPE) Julie Tourret, O. Gourmala, Yamina André, Journal of Crystal Growth Materials ScienceEngineeringSelective Area GrowthApplied PhysicsComplete Crystallographic Study	2009	24
Continuous-wave and ultrafast coherent reflectivity studies of excitons in bulk GaN Ouloum Aoudé, P. Disseix, J. Leymarie, Physical Review B Wide-bandgap SemiconductorPhotonicsEngineeringPhysicsOptical Properties	2008	22
Dynamics of Gold Droplet Formation on SiO<sub>2</sub>/Si(111) Surface Hadi Hijazi, Frédéric Leroy, Guillaume Monier, The Journal of Physical Chemistry C Materials ScienceAu DropletsSurface CharacterizationEngineeringGold Droplet Formation	2020	20

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