Thi Huong Ngo

Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

Kaddour Lekhal, B. Damilano, Thi Huong Ngo et al. · Applied Physics Letters · 2015 · 53 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures

Thi Huong Ngo, Bernard Gil, Pierre Valvin et al. · Applied Physics Letters · 2015 · 38 citations

Engineering, Materials Engineering, Materials Science +17

Internal quantum efficiency and Auger recombination in green, yellow and red InGaN-based light emitters grown along the polar direction

Thi Huong Ngo, Bernard Gil, B. Damilano et al. · Superlattices and Microstructures · 2017 · 26 citations

Engineering, Materials Engineering, Materials Science +17

Electrical activity at the AlN/Si Interface: identifying the main origin of propagation losses in GaN-on-Si devices at microwave frequencies

Micka Bah, Damien Valente, Marie Lesecq et al. · Scientific Reports · 2020 · 25 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Enhanced excitonic emission efficiency in porous GaN

Thi Huong Ngo, Bernard Gil, T. V. Shubina et al. · Scientific Reports · 2018 · 22 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17