E. Aujol

High-Quality 2'' Bulk-Like Free-Standing GaN Grown by HydrideVapour Phase Epitaxy on a Si-doped Metal Organic Vapour Phase Epitaxial GaN Template with an Ultra Low Dislocation Density

D. Gogova, Henrik Larsson, A. Kasic et al. · Japanese Journal of Applied Physics · 2005 · 51 citations

Engineering, Materials Engineering, Materials Science +17

Thermodynamical and kinetic study of the GaN growth by HVPE under nitrogen

E. Aujol, J. Napierala, Agnès Trassoudaine et al. · Journal of Crystal Growth · 2001 · 25 citations

Engineering, Materials Engineering, Materials Science +14

Continuous-wave and ultrafast coherent reflectivity studies of excitons in bulk GaN

Ouloum Aoudé, P. Disseix, J. Leymarie et al. · Physical Review B · 2008 · 22 citations

Natural Sciences, Materials Science, Physics +17

Hydrogen and nitrogen ambient effects on epitaxial growth of GaN by hydride vapour phase epitaxy

E. Aujol, Agnès Trassoudaine, Laure Siozade et al. · Journal of Crystal Growth · 2001 · 15 citations

Engineering, Materials Engineering, Materials Science +16

Influence of the partial pressure of GaCl3 in the growth process of GaN by HVPE under nitrogen

E. Aujol, Agnès Trassoudaine, Dominique Castelluci et al. · Materials Science and Engineering B · 2001 · 14 citations

Engineering, Materials Engineering, Materials Science +10