Laure Siozade

InGaN/GaN quantum wells grown by molecular-beam epitaxy emitting from blue to red at 300 K

B. Damilano, N. Grandjean, J. Massies et al. · Applied Physics Letters · 2000 · 75 citations · Full text

Semiconductors, Photonics, Electrical Engineering +13

Temperature Dependence of Optical Properties of h-GaN Films Studied by Reflectivity and Ellipsometry

Laure Siozade, Stéphane Colard, M. Mihailovic et al. · Japanese Journal of Applied Physics · 2000 · 46 citations · Full text

Wide-bandgap Semiconductor, Optical Materials, Engineering +16

GaInN/GaN multiple-quantum-well light-emitting diodes grown by molecular beam epitaxy

N. Grandjean, J. Massies, S. Dalmasso et al. · Applied Physics Letters · 1999 · 41 citations · Full text

Sharp Gainn/gan Interfaces, Electrical Engineering, Solid-state Lighting +10

Modelling of thermally detected optical absorption and luminescence of (In,Ga)N/GaN heterostructures

Laure Siozade, J. Leymarie, P. Disseix et al. · Solid State Communications · 2000 · 23 citations · Full text

Wide-bandgap Semiconductor, Engineering, Physics +9

Partial polarization of light induced by random defects at surfaces or bulks

Claude Amra, Myriam Zerrad, Laure Siozade et al. · Optics Express · 2008 · 23 citations · Full text

Optical Materials, Engineering, Polariton Dynamic +17