Hydrogen and nitrogen ambient effects on epitaxial growth of GaN by hydride vapour phase epitaxy

Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy

Akira Usui, Haruo Sunakawa, Akira Sakai et al. · Japanese Journal of Applied Physics · 1997 · 929 citations

Engineering, Materials Engineering, Materials Science +17

Growth of gallium nitride by hydride vapor-phase epitaxy

R. J. Molnar, Werner Götz, Lucia Romano et al. · Journal of Crystal Growth · 1997 · 232 citations

Engineering, Materials Engineering, Materials Science +13

Study on the growth rate in VPE of GaN

W. Seifert, G. Fitzl, E. Butter · Journal of Crystal Growth · 1981 · 58 citations

Engineering, Materials Engineering, Materials Science +11

Thermodynamic calculations in CVD growth of GaAs compounds

Christian Chatillon, C. Bérnard · Journal of Crystal Growth · 1985 · 50 citations

Engineering, Materials Engineering, Materials Science +16

Growth mechanisms of (00.1)GaN substrates in the hydride vapour-phase method: surface diffusion, spiral growth, H2 and GaCl3 mechanisms

R. Cadoret · Journal of Crystal Growth · 1999 · 47 citations

Engineering, Materials Engineering, Materials Science +17