J. P. Gowers

Excimer-laser-annealed poly-Si thin-film transistors

S. D. Brotherton, D. McCulloch, J. B. Clegg et al. · IEEE Transactions on Electron Devices · 1993 · 164 citations

Materials Science, Semiconductor Technology, Electrical Engineering +13

Some observations on Ge:GaAs(001) and GaAs:Ge(001) interfaces and films

J.H. Neave, P.K. Larsen, B.A. Joyce et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1983 · 88 citations

Optical Materials, Engineering, Optoelectronic Devices +16

Influence of melt depth in laser crystallized poly-Si thin film transistors

S. D. Brotherton, D. McCulloch, J. P. Gowers et al. · Journal of Applied Physics · 1997 · 78 citations

Optical Materials, Engineering, Energy Window +17

Laser crystallised poly-Si TFTs for AMLCDs

S. D. Brotherton, J. R. Ayres, Martin Edwards et al. · Thin Solid Films · 1999 · 68 citations

Materials Science, Engineering, Optical Properties +6

Defects and leakage currents in BF2-implanted preamorphized silicon

S. D. Brotherton, J. P. Gowers, N. D. Young et al. · Journal of Applied Physics · 1986 · 62 citations

Materials Science, Defect Tolerance, Semiconductors +14