J. P. Gowers

Excimer-laser-annealed poly-Si thin-film transistors

S. D. Brotherton, D. McCulloch, J. B. Clegg et al. · IEEE Transactions on Electron Devices · 1993 · 164 citations

Engineering, Electrical Engineering, Materials Science +17

Some observations on Ge:GaAs(001) and GaAs:Ge(001) interfaces and films

J.H. Neave, P.K. Larsen, B.A. Joyce et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1983 · 88 citations

Natural Sciences, Materials Science, Physics +17

Influence of melt depth in laser crystallized poly-Si thin film transistors

S. D. Brotherton, D. McCulloch, J. P. Gowers et al. · Journal of Applied Physics · 1997 · 78 citations

Engineering, Materials Engineering, Materials Science +15

Laser crystallised poly-Si TFTs for AMLCDs

S. D. Brotherton, J. R. Ayres, Martin Edwards et al. · Thin Solid Films · 1999 · 68 citations

Natural Sciences, Electrical Engineering, Materials Science +6

Defects and leakage currents in BF2-implanted preamorphized silicon

S. D. Brotherton, J. P. Gowers, N. D. Young et al. · Journal of Applied Physics · 1986 · 62 citations

Engineering, Materials Engineering, Materials Science +17