Shenwu Zhu - Concepedia

Author

Shenwu Zhu

Peking University ORCID

Also Known As

Shenwu Zhu

Publications

285

Citations

H-Index

Concepts

All Affiliations

Peking University Wuhan National Laboratory for Optoelectronics Huazhong University of Science and Technology

About

Shenwu Zhu is an author at Peking University specializing in applied physics, microelectronics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	5	5	144
2	Applied Physics	5	5	144
3	Electrical Engineering	5	5	144
4	Computer Engineering	1	1	47
5	Mechanical Engineering	1	1	24

Shenwu Zhu

Publications

246

Citations

H-Index

Page 1

	Year	Citations
True Nonvolatile High‐Speed DRAM Cells Using Tailored Ultrathin IGZO Qianlan Hu, Chengru Gu, Qijun Li, Advanced Materials	2023	64
Capacitorless DRAM Cells Based on High-Performance Indium-Tin-Oxide Transistors With Record Data Retention and Reduced Write Latency Qianlan Hu, Chengru Gu, Shenwu Zhu, IEEE Electron Device Letters Non-volatile MemoryRecord Data RetentionEngineeringEmerging Memory TechnologyComputer Architecture	2022	47
Optimized IGZO FETs for Capacitorless DRAM with Retention of 10 ks at RT and 7 ks at 85 °C at Zero V<sub>hold</sub> with Sub-10 ns Speed and 3-bit Operation Qianlan Hu, Qijun Li, Shenwu Zhu, 2022 International Electron Devices Meeting (IEDM) Low-power ElectronicsRemarkable Retention TimeElectrical EngineeringCapacitorless DramEngineering	2022	35
Ultrashort 15-nm flexible radio frequency ITO transistors enduring mechanical and temperature stress Qianlan Hu, Shenwu Zhu, Chengru Gu, Science Advances EngineeringMechanical EngineeringWearable TechnologyFlexible SensorNanoelectronics	2022	24
High-Performance Short-Channel Top-Gate Indium-Tin-Oxide Transistors by Optimized Gate Dielectric Chengru Gu, Qianlan Hu, Shenwu Zhu, IEEE Electron Device Letters Semiconductor TechnologyElectrical EngineeringElectronic DevicesEngineeringElectronic Engineering	2023	20
BEOL-Compatible High-Performance a-IGZO Transistors with Record high I<sub>ds,max</sub> = 1207 μA/μm and on-off ratio exceeding 10<sup>11</sup> at Vds = 1V Qijun Li, Chengru Gu, Shenwu Zhu, 2022 International Electron Devices Meeting (IEDM) Semiconductor TechnologyOptimized Ito InterlayerElectrical EngineeringElectronic DevicesEngineering	2022	18
First Experimental Demonstration of 3D-Stacked 2T0C DRAM Cells Based on Indium Tin Oxide Channel C.L. Gu, Qianlan Hu, Shenwu Zhu, IEEE Electron Device Letters	2024	16
3D stacked IGZO 2T0C DRAM array with multibit capability for computing in memory applications Qijun Li, Qianlan Hu, Shenwu Zhu, Science Advances	2025	12
First Demonstration of Sequential Integration for Stacked Gate-All-Around a-IGZO Nanosheet Transistors with Record I<sub>d</sub> = 2.05 mA/µm, g<sub>m</sub> = 1.13 mS/µm and Ultralow SS = 66 mV/dec Qijun Li, Wenjie Zhao, Qianlan Hu,	2023	10

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