Shenwu Zhu

True Nonvolatile High‐Speed DRAM Cells Using Tailored Ultrathin IGZO

Qianlan Hu, Chengru Gu, Qijun Li et al. · Advanced Materials · 2023 · 64 citations

Capacitorless DRAM Cells Based on High-Performance Indium-Tin-Oxide Transistors With Record Data Retention and Reduced Write Latency

Qianlan Hu, Chengru Gu, Shenwu Zhu et al. · IEEE Electron Device Letters · 2022 · 47 citations

Non-volatile Memory, Record Data Retention, Engineering +16

Optimized IGZO FETs for Capacitorless DRAM with Retention of 10 ks at RT and 7 ks at 85 °C at Zero V_hold with Sub-10 ns Speed and 3-bit Operation

Qianlan Hu, Qijun Li, Shenwu Zhu et al. · 2022 International Electron Devices Meeting (IEDM) · 2022 · 35 citations

Low-power Electronics, Remarkable Retention Time, Electrical Engineering +13

Ultrashort 15-nm flexible radio frequency ITO transistors enduring mechanical and temperature stress

Qianlan Hu, Shenwu Zhu, Chengru Gu et al. · Science Advances · 2022 · 24 citations · Full text

Engineering, Mechanical Engineering, Wearable Technology +17

High-Performance Short-Channel Top-Gate Indium-Tin-Oxide Transistors by Optimized Gate Dielectric

Chengru Gu, Qianlan Hu, Shenwu Zhu et al. · IEEE Electron Device Letters · 2023 · 20 citations

Semiconductor Technology, Electrical Engineering, Electronic Devices +11