A. Avellán

Influence of<tex>$hbox Al_2hbox O_3$</tex>Dielectrics on the Trap-Depth Profiles in MOS Devices Investigated by the Charge-Pumping Method

S. Jakschik, A. Avellán, Uwe Schroeder et al. · IEEE Transactions on Electron Devices · 2004 · 40 citations

Engineering, Trap Centers, High-k Dielectric Transistors +19

Grain boundary investigations on sulfurized Cu(In,Ga)(S,Se)2 solar cells using atom probe tomography

Jan Keller, Ralf Schlesiger, I. Riedel et al. · Solar Energy Materials and Solar Cells · 2013 · 36 citations

Materials Science, Engineering, Electron Microscopy +8

Impact of Soft and Hard Breakdown on Analog and Digital Circuits

A. Avellán, Wolfgang H. Krautschneider · IEEE Transactions on Device and Materials Reliability · 2004 · 36 citations

Electrical Engineering, Engineering, Mos Transistor +12

Model for the voltage and temperature dependence of the soft breakdown current in ultrathin gate oxides

A. Avellán, E. Miranda, Dietmar Schroeder et al. · Journal of Applied Physics · 2004 · 31 citations

Engineering, Temperature Dependence, Semiconductor Device +17

Charge-based capacitance measurements (CBCM) on MOS devices

B. Sell, A. Avellán, Wolfgang H. Krautschneider · IEEE Transactions on Device and Materials Reliability · 2002 · 28 citations

Device Modeling, Electrical Engineering, High Resolution +10