Jeong-Don Lim

A 1Tb 4b/cell 64-stacked-WL 3D NAND flash memory with 12MB/s program throughput

Seungjae Lee, Chulbum Kim, Minsu Kim et al. · 2018 · 108 citations

Engineering, Computer Engineering, Electrical Engineering +13

A 7 Gb/s/pin 1 Gbit GDDR5 SDRAM With 2.5 ns Bank to Bank Active Time and No Bank Group Restriction

Tae-Young Oh, Young‐Soo Sohn, Seung-Jun Bae et al. · IEEE Journal of Solid-State Circuits · 2010 · 34 citations

Engineering, Computer Engineering, Embedded Systems +12

A 40nm 2Gb 7Gb/s/pin GDDR5 SDRAM with a programmable DQ ordering crosstalk equalizer and adjustable clock-tracking BW

Seung-Jun Bae, Young‐Soo Sohn, Tae-Young Oh et al. · 2011 · 32 citations

Engineering, Computer Engineering, Electrical Engineering +17

13.1 A 1Tb 4b/cell NAND Flash Memory with t_PROG=2ms, t_R=110µs and 1.2Gb/s High-Speed IO Rate

Doo-Hyun Kim, Hyung-Gon Kim, Yun Sung-Won et al. · 2020 · 24 citations

Engineering, Electrical Engineering, Materials Science +17

A 16Gb 9.5Gb/S/pin LPDDR5X SDRAM With Low-Power Schemes Exploiting Dynamic Voltage-Frequency Scaling and Offset-Calibrated Readout Sense Amplifiers in a Fourth Generation 10nm DRAM Process

Dae-Hyun Kim, Byungkyu Song, Hyun-A Ahn et al. · 2022 IEEE International Solid- State Circuits Conference (ISSCC) · 2022 · 22 citations

Engineering, Computer Engineering, Electrical Engineering +17