13.1 A 1Tb 4b/cell NAND Flash Memory with t<sub>PROG</sub>=2ms, t<sub>R</sub>=110µs and 1.2Gb/s High-Speed IO Rate

Doo-Hyun Kim, Hyung-Gon Kim, Yun Sung-Won, Youngsun Song, Jisu Kim, Sung-Min Joe, Kyung‐Hwa Kang, Joonsuc Jang, Hyun-Jun Yoon, Kanabin Lee,

2020 · 24 citations · 8 references

Concepts

Abstract

3D NAND flash memory has enhanced its areal density by more than 50% per year by virtue of the aggressive development of 3D WL stacking technology for the recent three consecutive years [1]–[3]. Also storage market still requires more bits for diverse digital applications. [4]

References

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