Publication | Closed Access
13.1 A 1Tb 4b/cell NAND Flash Memory with t<sub>PROG</sub>=2ms, t<sub>R</sub>=110µs and 1.2Gb/s High-Speed IO Rate
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Citations
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References
2020
Year
Unknown Venue
EngineeringStorage MarketEmerging Memory TechnologyComputer ArchitectureNand Flash MemoryComputer MemoryAreal Density3D MemoryMemory DeviceMemory DevicesElectrical EngineeringElectronic MemoryFlash MemoryComputer EngineeringMicroelectronicsMemory ReliabilityHigh Bandwidth MemorySemiconductor MemoryTechnologyHigh-speed Io Rate
3D NAND flash memory has enhanced its areal density by more than 50% per year by virtue of the aggressive development of 3D WL stacking technology for the recent three consecutive years [1]–[3]. Also storage market still requires more bits for diverse digital applications. [4]
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